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FDMS86104 Dataheets PDF



Part Number FDMS86104
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDMS86104 DatasheetFDMS86104 Datasheet (PDF)

FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16 A, 24 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shield.

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FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16 A, 24 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Application „ DC-DC Conversion Top Bottom Pin 1 S S D S S G S D Power 56 D D D D S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 16 7 30 96 73 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.7 (Note 1a) 50 °C/W Device Marking FDMS86104 Device FDMS86104 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMS86104 Rev. C3 www.fairchildsemi.com FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V 100 ID = 250 μA, referenced to 25 °C VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V V 66 mV/°C 1 μA ±100 nA On Characteristics VGS(th) ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250 μA 2 ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 7 A VGS = 6 V, ID = 5.5 A VGS = 10 V, ID = 7 A, TJ = 125 °C VDS = 10 V, ID = 7 A 2.9 4 V -10 mV/°C 20 24 27 39 mΩ 33 40 18 S Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 694 923 pF 178 237 pF 8 13 pF 0.5 Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gat.


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