Document
FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86104
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 16 A, 24 mΩ
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant
Application
DC-DC Conversion
Top
Bottom
Pin 1 S
S
D
S
S G
S
D
Power 56
D D D D
S
D
G
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 100 ±20 16 7 30 96 73 2.5
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.7
(Note 1a)
50
°C/W
Device Marking FDMS86104
Device FDMS86104
Package Power 56
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS86104 Rev. C3
www.fairchildsemi.com
FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET
SS SF DS DF G
SS SF DS DF G
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
100
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
V
66
mV/°C
1
μA
±100 nA
On Characteristics
VGS(th)
ΔVGS(th) ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250 μA
2
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 7 A VGS = 6 V, ID = 5.5 A VGS = 10 V, ID = 7 A, TJ = 125 °C VDS = 10 V, ID = 7 A
2.9
4
V
-10
mV/°C
20
24
27
39
mΩ
33
40
18
S
Dynamic Characteristics
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VDS = 50 V, VGS = 0 V, f = 1 MHz
694
923
pF
178
237
pF
8
13
pF
0.5
Ω
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gat.