SIS472DN

SiS472DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0089 at VGS = 10 V 0.0124 at VGS = 4.5 V ID (A)a, g 20 20 Qg (Typ.) 9.8 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Optimized for High-Side Synchronous Rectifier Operation 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC D PowerPAK® 1212-8 3.30 mm S 1 2 3 S S 3.30 mm APPLICATIONS Notebook CPU Core - High-Side Switch G G 4 D 8 7 6 5 D D D Bottom View Ordering Information: SiS472DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 20 20g ID 20g 15b, c 12b, c 50 20g 3.2b, c 21 22 28 18 3.5b, c 2.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t  10 s RthJA 29 36 Maximum Junction-to-Ambientb, f °C/W 3.6 4.5 Maximum Junction-to-Case (Drain) Steady State RthJC Notes: a. Base on TC =...