SIS443DN

SiS443DN Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. 0.0117 at VGS = - 10 V 0.0160 at VGS = - 4.5 V ID (A) - 35d - 35d Qg (Typ.) 41.5 nC TrenchFET® Power MOSFET 100% Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8 APPLICATIONS Notebook Computers and Mobile S 3.30 mm S 1 2 3 S S 3.30 mm G 4 D 8 7 6 5 D D D Computing - Adaptor Switch - Load Switch - DC/DC Converter - Power Management G Bottom View D P-Channel MOSFET Ordering Information: SiS443DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 40 ± 20 - 35d - 35d - 13.3a, b - 10.6a, b - 80 - 35d - 3a, b - 20 20 52 33 3.7a, b 2.4a, b - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Case t 10 s Steady State Symbol RthJA RthJC Typical 26 ...