SIS414DN

New Product SiS414DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.016 at VGS = 4.5 V 0.020 at VGS = 2.5 V ID (A)a, g 20 20 Qg (Typ.) 8.2 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 3.30 mm S 1 2 3 S S 3.30 mm APPLICATIONS Synchronous DC/DC Converter System Power, Load Switch for Notebook G D G 4 D 8 7 6 5 D D D Bottom View Ordering Information: SiS414DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IAS EAS IS ID Symbol VDS VGS Limit 30 ± 12 20g 20g 10.8b, c 8.7b, c 50 10 5 20g 3.0b, c 31 20 3.4b, c 2.2b, c - 55 to 150 260 °C W mJ A A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 29 3.3 Maximum 36 4.0 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounte...