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2SA1091

Part Number	2SA1091
Manufacturer	Toshiba Semiconductor
Description	TRANSISTOR
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 2SA1091 High Voltage Control Applications Pl...
Datasheet	2SA1091 PDF File

Overview

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1091 2SA1091 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.
5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.
) • Complementary to 2SC2551.
Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −300 V Collector-emitter voltage VCEO −300 V Emitter-base voltage VEBO −8 V Collector current IC −100 mA Base current Collector power dissipation Junction temperature Storage t...

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