GM965

CORPORATION GM965 Description NPN EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/04/16 REVISED DATE :2004/12/08B The GM965 is designed for use as AF output amplifier and flash unit. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Symbol Tj Tstg Ratings +150 -55 ~ +150 Unit Absolute Maximum Ratings at Ta = 25 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Total Power Dissipation at Ta = 25 BVCBO BVCEO BVEBO IC IC PD 40 20 7.0 5 8 1.2 V V V A A W Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob at Ta = 25 Min. 40 20 7 230 150 Typ. 0.35 150 Max. 0.1 0.1 1 800 50 MHz pF Unit V V V uA uA V IC=100uA IC=1mA IE=10uA VCB=60V VEB=7V IC=3A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range Q 230-380 R 340-600 S 560-800 GM965 Page: 1/2 Free Datasheet http://www.datasheet4u.com/ CORPORATION Characteristics Curve ISSUED DATE :2004/04/16 REVISED DATE :2004/12/08B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written appro...