GM9452

Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GM9452 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50m 4A Description The GM9452 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Simple Drive Requirement *Low Gate Charge *Capable of 2.5V Gate Drive Features Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , [email protected] Continuous Drain Current , [email protected] Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 20 16 4 2.5 12 1.25 0.01 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 100 Unit /W GM9452 Page: 1/4 Free Datasheet http://www.datasheet4u.com/ ISSUED DATE :2005/09/14 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 20 0.7 Typ. 0.03 10 6 1 2 8 9 13 3 360 80 65 Max. 1.5 100 1 25 38 50 10 570 pF ns nc Unit V V/ V S nA uA uA m Test Conditions VGS=...