PTFA070601E

PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA070601E Package H-36265-2 PTFA070601F Package H-37265-2 2-Carrier WCDMA Performance VDD = 28 V, IDQ = 600 m A, ƒ = 760 MHz, 3GPP WCDMA s ignal, P/A R = 8 dB, 10 MHz carrier spacing -25 -30 55 50 Features Broadband internal matching Typical WCDMA performance, 760 MHz, 28 V - Average output power = 12 W - Gain = 19 dB - Efficiency = 29% Typical CW performance, 760 MHz, 28 V - Output power at P–1dB = 60 W - Gain = 19 dB - Efficiency = 72% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power Pb-free and RoHS-compliant IM3 (dBc), ACPR (dBc) 45 -35 -40 -45 -50 -55 29 31 33 Efficiency IM3 40 35 30 25 20 15 Drain Efficiency (%) ACPR 35 37 39 41 43 45 47 10 5 Output Power, avg. (dBm ) RF Characteristics WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 600 mA, POU...