TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1048
2SA1048
Audio Frequency Amplifier Applications
Un...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1048
2SA1048
Audio Frequency Amplifier Applications
Unit: mm
Small package High voltage: VCEO = −50 V (min) High hFE: hFE = 70~400 Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2458
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −50 V
Collector-emitter voltage
VCEO −50 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−150
mA
Base current
IB
−50 mA
JEDEC
―
Collector power dissipation
PC
200 mW
JEITA
―
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods” ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off...