PPJA3431
20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage Features
-20 V
Current
-1.5A
...
PPJA3431
20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage Features
-20 V
Current
-1.5A
SOT-23
Unit: inch(mm)
RDS(ON) ,
[email protected],
[email protected]<325mΩ RDS(ON) ,
[email protected],
[email protected]<420mΩ RDS(ON) ,
[email protected],
[email protected]<600mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case : SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0003 ounces, 0.0084 grams Marking : A31
http://www.DataSheet4U.com/
Fig.180 (TOP VIEW)
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
(Note 4)
o
SYMBOL VDS VGS ID IDM Ta=25oC Derate above 25 C
o
LIMIT
UNITS V V A A W mW/ oC
o
-20 +8 -1.5 -4 1.25 10 -55~150 100
o
PD TJ,TSTG RθJA
Operating Junction and Storage Temperature Range Thermal resistance Junction to Ambient (Note 3)
C
C/W
July 11,2013-REV.00
Page 1
PPJA3431
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Revers...