2SA1010

DATA SHEET SILICON POWER TRANSISTOR 2SA1010 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SA1010 is a mold power transistor developed for highvoltage high-speed switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and highfrequency power amplifiers. PACKAGE DRAWING (UNIT: mm) FEATURES Low collector saturation voltage Fast switching speed Complementary transistor: 2SC2334 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25 °C) PT (Ta = 25 °C) Tj Tstg Ratings −100 −100 −7.0 −7.0 −15 −3.5 40 1.5 150 −55 to +150 Unit V V Pin Connection V A A A W W °C °C * PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16118EJ2V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 2SA1010 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector to emitter voltage Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS)1 Conditions...