TC2211

TC2211 REV4_20070504 Plastic Packaged Low Noise PHEMT GaAs FETs FEATURES 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 6.5 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 7.5 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Low Cost Plastic SOT143 Package PHOTO ENLARGEMENT DESCRIPTION The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol CONDITIONS NF Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz Ga P1dB GL IDSS gm VP BVDGO Rth Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 40 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.6mA Drain-Gate Breakdown Voltage at IDGO = 0.15mA Thermal Resistance 9 MIN http://www.DataSheet4U.net/ TYP 1.5 6.5 21.5 7.5 90 100 -1.0* 12 150 MAX 2 UNIT dB dB dBm dB mA mS Volts Volts °C/W 5.5 20.5 6.5 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current R...