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AP50G60W-HF

Advanced Power Electronics

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Volt...


Advanced Power Electronics

AP50G60W-HF

File Download Download AP50G60W-HF Datasheet


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AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.5V@IC=40A ▼ RoHS Compliant & Halogen-Free N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C VCES IC 600V 40A C G C E TO-3P G E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25oC IC@TC=100oC ICM PD@TC=25oC TSTG TJ TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Parameter Collector-Emitter Voltage Rating 600 +30 75 40 150 277 -55 to 150 150 300 Units V V A A A W o o o C C C Notes: 1.Pulse width limited by max. junction temperature . http://www.DataSheet4U.net/ Thermal Data Symbol Rthj-c Rthj-a Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Parameter Value 0.45 40 Units o o C/W C/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres Parameter Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE=0V VCE=30V f=1.0...




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