(KHX1600C9D3K2G / KHX1600C9D3K8G) DDR3-1600 CL9 240-Pin DIMM Kit
Memory Module Specifications
KHX1600C9D3K2/8G
8GB (4GB 512M x 64-Bit x 2 pcs.) DDR3-1600 CL9 240-Pin DIMM Kit
SPECIFICAT...
Description
Memory Module Specifications
KHX1600C9D3K2/8G
8GB (4GB 512M x 64-Bit x 2 pcs.) DDR3-1600 CL9 240-Pin DIMM Kit
SPECIFICATIONS
CL(IDD) Row Cycle Time (tRCmin) Refresh to Active/Refresh Command Time (tRFCmin) Row Active Time (tRASmin) Maximum Operating Power UL Rating Operating Temperature Storage Temperature 9 cycles 49.5ns (min.) 160ns (min.) 36ns (min.) 2.400 W* (per module) 94 V - 0 0o C to 85o C -55o C to +100o C
*Power will vary depending on the SDRAM used.
DESCRIPTION
Kingston's KHX1600C9D3K2/8G is a kit of two 512M x 64-bit (4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory modules, based on sixteen 256M x 8-bit FBGA components per module. Total kit capacity is 8GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 9-9-9-27 at 1.65V.The SPD's are programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9. This 240-pin DIMM uses gold contact fingers. The JEDEC electrical and mechanical specifications are as follows:
http://www.DataSheet4U.net/
FEATURES
JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on th...
Similar Datasheet