DatasheetsPDF.com

K4A60DA Dataheets PDF



Part Number K4A60DA
Manufacturers Toshiba
Logo Toshiba
Description TK4A60DA
Datasheet K4A60DA DatasheetK4A60DA Datasheet (PDF)

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID ID.

  K4A60DA   K4A60DA


TK4A60DA K4A60DA LTK1180-103


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)