N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N70BI-H-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteris...
Description
AP04N70BI-H-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
700V 2.4Ω 4A
G S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DCAC converters and high current high speed switching circuits.
G D S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
http://www.DataSheet4U.net/
Rating 700 +30 4 2.5 15 33 0.26
2
Units V V A A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
8 4 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.8 65 Units ℃/W ℃/W 1 201008184
Data & specifications subject to change without notice
datasheet pdf - http://www.DataSheet4U.net/
AP04N70BI-H-HF
Electrical Characteristics@...
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