N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N60R-A-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characterist...
Description
AP04N60R-A-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
650V 2.5Ω 4A
S
Description
AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. It provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching design and cost-effectiveness. The TO-262 package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DCAC converters and high current high speed switching circuits. G D
S
TO-262(R)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage
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Rating 650 +30 4 2.2 15 59.5 2
3
Units V V A A A W W mJ A ℃ ℃
Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
8 4 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.1 62 Units ℃/W ℃/W
Data & specifications ...
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