N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N60H-H-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characterist...
Description
AP04N60H-H-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
700V 2.8Ω 4A
Description
AP04N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. It provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching design and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
G D S
TO-252(H)
Absolute Maximum Ratings
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Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 700 +30 4 2.2 15 59.5
Units V V A A A W W mJ ℃ ℃
Total Power Dissipation Total Power Dissipation
4 3
2 8 -55 to 150 -55 to 150
Single Pulse Avalanche Energy Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 2.1 62.5
Units ℃/W ℃/W
Data & specificati...
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