DatasheetsPDF.com

2N7219 Dataheets PDF



Part Number 2N7219
Manufacturers Seme LAB
Logo Seme LAB
Description NCHANNEL POWER MOSFET
Datasheet 2N7219 Datasheet2N7219 Datasheet (PDF)

IRFM240 2N7219 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • N–CHANNEL MOSFET • HIGH VOLTAGE 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 200V 18A 0.18Ω 1 2 3 20.07 (0.790) 20.32 (0.800) 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC • HERMETIC ISOLATED TO-254 PACKAGE 3.81 (0.150) BSC • ELEC.

  2N7219   2N7219



Document
IRFM240 2N7219 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • N–CHANNEL MOSFET • HIGH VOLTAGE 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 200V 18A 0.18Ω 1 2 3 20.07 (0.790) 20.32 (0.800) 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC • HERMETIC ISOLATED TO-254 PACKAGE 3.81 (0.150) BSC • ELECTRICALLY ISOLATED TO–254AA – Isolated Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VGS ID IDM PD IAR dv / dt RθJC RθJA TJ , TSTG TL 1) 2) Gate – Source Voltage Continuous Drain Current @ VGS = 10V , TC = 25°C @ VGS = 10V , TC = 100°C Pulsed Drain Current Max. Power Dissipation @ TC = 25°C Linear Derating Factor Avalanche Current 1 Peak Diode Recovery 2 Thermal Resistance Junction – Case Thermal Resistance Junction – Ambient Operating Junction and Storage Temperature Range Lead Temperature (1.6mm from case for 10s) ±20V 18A 11A 72A 125W 1.0W / °C 18 5.0V / ns 1.0°C / W 48°C / W –55 to 150°C 300°C VDD = 50V , Starting TJ = 25°C , L ≥ 1.3mH , VGS = 10V , Peak IL = 18A ISD ≤ 18A , di/dt ≤ 150A / µS , VDD ≤ 200V , TJ ≤ 150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4145 Issue 1 IRFM240 2N7219 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Breakdown Voltage Static Drain – Source On–State Resistance 2 Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 2 Min. 200 Typ. Max. Unit V ID = 1mA ∆BVDSS Temperature Coefficient of Reference to 25°C ID = 11A ID = 18A ID = 250µA IDS = 11A VDS = 160V TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 18A VDS = 100V VDD = 100V ID = 18A RG = 9.1Ω VGS = 10V 2.0 6.1 0.29 0.18 0.25 4.0 25 250 100 –100 1300 400 130 60 10.6 37.6 20 105 58 67 18 72 V / °C Ω V (Ω) S(Ω µA nA VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance VDS ≥ 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn– On Delay Time.


2N7219 2N7219 2N722


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)