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2MBI200UD-120 Dataheets PDF



Part Number 2MBI200UD-120
Manufacturers Fe
Logo Fe
Description IGBT MODULE U-Series
Datasheet 2MBI200UD-120 Datasheet2MBI200UD-120 Datasheet (PDF)

2MBI200UD-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 200A 2 in one-package Equivalent Circuit Schematic C1 E2 Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines C2E1 G1 E1 G2 E2 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter.

  2MBI200UD-120   2MBI200UD-120



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2MBI200UD-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 200A 2 in one-package Equivalent Circuit Schematic C1 E2 Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines C2E1 G1 E1 G2 E2 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device AC:1min. Rating 1200 ±20 300 200 600 400 200 400 1040 +150 -40 to +125 2500 3.5 4.5 Unit V V A W °C VAC N·m *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6) Electrical characteristics (at Tj=25°C unless otherwise specified) http://www.DataSheet4U.net/ Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=200A VGE=±15V RG=3 Ω VGE=0V IF=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 IF=200A Characteristics Min. Typ. – – – – 4.5 6.5 – 1.85 – 2.10 – 1.75 – 2.00 – 22 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.70 – 1.80 – 1.60 – 1.70 – – – 0.52 Unit Max. 2.0 400 8.5 2.20 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.00 – 1.90 – 0.35 – mA nA V V nF µs V µs mΩ *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.025 Unit Max. 0.12 0.20 – °C/W °C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. datasheet pdf - http://www.DataSheet4U.net/ 2MBI200UD-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 VGE=20V 15V 12V 400 Collector current : Ic [A] Collector current : Ic [A] 400 500 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip VGE=20V 15V 12V 300 10V 300 200 200 10V 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collecto.


BLY89A 2MBI200UD-120 TLWLF1100C


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