Document
2MBI200UD-120
IGBT Module U-Series
Features
· High speed switching · Voltage drive · Low inductance module structure
1200V / 200A 2 in one-package
Equivalent Circuit Schematic
C1 E2
Applications
· Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines
C2E1 G1 E1 G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions
Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C
Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2
1 device
AC:1min.
Rating 1200 ±20 300 200 600 400 200 400 1040 +150 -40 to +125 2500 3.5 4.5
Unit V V A
W °C VAC N·m
*1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
http://www.DataSheet4U.net/
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead
Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=200A VGE=±15V RG=3 Ω VGE=0V IF=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C
Input capacitance Turn-on time
Turn-off time Forward on voltage
Reverse recovery time Lead resistance, terminal-chip*3
IF=200A
Characteristics Min. Typ. – – – – 4.5 6.5 – 1.85 – 2.10 – 1.75 – 2.00 – 22 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.70 – 1.80 – 1.60 – 1.70 – – – 0.52
Unit Max. 2.0 400 8.5 2.20 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.00 – 1.90 – 0.35 – mA nA V V
nF µs
V
µs mΩ
*3:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.025 Unit Max. 0.12 0.20 – °C/W °C/W °C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
datasheet pdf - http://www.DataSheet4U.net/
2MBI200UD-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip
500 VGE=20V 15V 12V 400 Collector current : Ic [A] Collector current : Ic [A] 400 500
IGBT Module
Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip
VGE=20V 15V
12V
300 10V
300
200
200
10V
100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector current vs. Collecto.