High Gain Low-Noise Amplifier
DATA SHEET
SKY67175-306LF: 1.5 to 3.8 GHz Two-Stage, High-Gain Low-Noise Amplifier
Applications
LTE, GSM, WCDMA, HSDP...
Description
DATA SHEET
SKY67175-306LF: 1.5 to 3.8 GHz Two-Stage, High-Gain Low-Noise Amplifier
Applications
LTE, GSM, WCDMA, HSDPA macro-base and micro-base stations
L and S band ultra-low-noise receivers Cellular repeaters, small-cell, macro-cell, DAS, and RRH/RRUs High-temperature transceiver applications to +105 °C
RF_IN1
Active Bias
RF_OUT2 RF_OUT2
Features
Part of complete SDARS LNA reference design Ultra-low reference design NF: 0.64 dB @ 3.5 GHz High gain: 33 dB @ 3.5 GHz Low quiescent current: 115 mA Stage 1 and Stage 2 adjustable current Small QFN (16-pin, 4 x 4 mm) Pb-free package
(MSL1, 260 C per JEDEC J-STD-020)
Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074.
RF_OUT1 RF_IN2
S2407
Figure 1. SKY67175-306LF Block Diagram
Description
The SKY67175-306LF is a two-stage, GaAs pHEMT low-noise amplifier (LNA) with active bias and high-linearity performance. The pHEMT front end of the device provides an ultra-low noise figure (NF) while the cascode output stage provides high gain, linearity, and efficiency. With excellent thermal performance, the SKY67175-306LF is rated for operation up to +105 °C. The SKY67175-306LF is provided in a 4 x 4 mm, 16-pin Quad Flat No-Lead (QFN) package. A functional block diagram is shown in Figure 1. The pin configuration and package are shown in Figure 2. Signal pin assignments and function...
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