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K210

Toshiba Semiconductor
Part Number K210
Manufacturer Toshiba Semiconductor
Description 2SK210
Published Jun 4, 2013
Detailed Description 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier ...
Datasheet PDF File K210 PDF File

K210
K210

Overview
2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • • • High power gain: GPS = 24dB (typ.
) (f = 100 MHz) Low noise figure: NF = 1.
8dB (typ.
) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.
) (f = 1 kHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating −18 10 100 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA SC-59 tem...


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