2N7002

2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor August 2016 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. D 1 TO-92 1. Source 2. Gate 3. Drain S G SOT-23 (TO-236AB) 2N7002/NDS7002A G D S Ordering Information Part Number 2N7000 2N7000_D74Z 2N7000_D75Z 2N7000_D26Z 2N7002 NDS7002A Marking 2N7000 2N7000 2N7000 2N7000 702 712 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L SOT-23 3L Packing Method Bulk Ammo Tape and Reel Tape and Reel Tape and Reel Tape and Reel Min Order Qty / Immediate Pack Qty 10000 / 1000 2000 / 2000 2000 / 2000 2000 / 2000 3000 / 3000 3000 / 3000 © 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 1 www.fairchildsemi.com 2N7000 / 2N7002 / ...