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NGTG15N60S1EG Dataheets PDF



Part Number NGTG15N60S1EG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet NGTG15N60S1EG DatasheetNGTG15N60S1EG Datasheet (PDF)

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Features • Low Saturation Voltage Resulting in Low Conduction Loss • Low Switching Loss in Higher Frequency A.

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NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Features • Low Saturation Voltage Resulting in Low Conduction Loss • Low Switching Loss in Higher Frequency Applications • 5 ms Short Circuit Capability • Excellent Current versus Package Size Performance Density • This is a Pb−Free Device Typical Applications • White Goods Appliance Motor Control • General Purpose Inverter • AC and DC Motor Control ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 650 V IC A 30 15 Pulsed collector current, Tpulse limited by ICM 120 A TJmax Gate−emitter voltage VGE $20 V Power dissipation @ TC = 25°C @ TC = 100°C PD W 117 47 Short circuit withstand time VGE = 15 V, VCE = 400 V, TJ v +150°C Operating junction temperature range tSC 5 ms TJ −55 to °C +150 Storage temperature range Tstg −55 to °C +150 Lead temperature for soldering, 1/8” from TSLD 260 °C case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 15 A, 650 V VCEsat = 1.5 V C G E C G CE TO−220 CASE 221A STYLE 9 MARKING DIAGRAM G15N60S1G AYWW A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTG15N60S1EG TO−220 50 Units / Rail (Pb−Free) © Semiconductor Components Industries, LLC, 2015 1 December, 2015 − Rev. 5 Publication Order Number: NGTG15N60S1E/D NGTG15N60S1EG THERMAL CHARACTERISTICS Rating Thermal resistance junction to case, for IGBT Thermal resistance junction to ambient Symbol RqJC RqJA Value 1.06 60 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate−emitter short−circuited Gate leakage current, collector−emitter short−circuited VGE = 15 V , IC = 15 A VGE = 15 V , IC = 15 A, TJ = 150°C VGE = VCE , IC = 250 mA VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C VGE = 20 V, VCE = 0 V VCEsat 1.3 1.5 1.7 V 1.55 1.75 1.95 VGE(th) 4.5 5.5 6.5 V ICES − 10 − mA − − 200 IGES − − 100 nA Forward Transconductance DYNAMIC CHARACTERISTIC VCE = 20 V, IC = 15 A gfs − 10.1 − S Input capacitance Output capacitance Reverse transfer capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Gate charge total Gate to emitter charge Gate to collector charge VCE = 480 V, IC = 15 A, VGE = 15 V SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Cies − 1950 − Coes − 70 − pF Cres − 48 − Qg − 88 − Qge − 16 − nC Qgc − 42 − Turn−on delay time td(on) − 65 − Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V* tr − 28 − ns td(off) − 170 − tf − 140 − Eon − 0.550 − Turn−off switching loss Eoff − 0.350 − mJ Total switching loss Ets − 0.900 − Turn−on delay time td(on) − 65 − Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V* tr − 28 − ns td(off) − 180 − tf − 260 − Eon − 0.650 − Turn−off switching loss Eoff − 0.600 − mJ Total switching loss Ets − 1.250 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTB15N60S1EG. www.onsemi.com 2 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) NGTG15N60S1EG TYPICAL CHARACTERISTICS 60 TJ = 25°C 50 VGE = 17 V to 13 V VGE = 11 V 40 30 20 VGE = 9 V 10 0 VGE = 7 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics IC, COLLECTOR CURRENT (A) 60 TJ = 150°C 50 40 VGE = 17 V to 13 V VGE = 11 V 30 20 VGE = 9 V 10 VGE = 7 V 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. Output Characteristics 70 60 VGE = 17 V to 13 V TJ = −40°C VGE = 11 V 5.


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