Document
NGTG15N60S1EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications.
Features
• Low Saturation Voltage Resulting in Low Conduction Loss • Low Switching Loss in Higher Frequency Applications • 5 ms Short Circuit Capability • Excellent Current versus Package Size Performance Density • This is a Pb−Free Device
Typical Applications
• White Goods Appliance Motor Control • General Purpose Inverter • AC and DC Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES
650
V
IC
A
30
15
Pulsed collector current, Tpulse limited by
ICM
120
A
TJmax
Gate−emitter voltage
VGE
$20
V
Power dissipation @ TC = 25°C @ TC = 100°C
PD
W
117
47
Short circuit withstand time VGE = 15 V, VCE = 400 V, TJ v +150°C
Operating junction temperature range
tSC
5
ms
TJ
−55 to °C
+150
Storage temperature range
Tstg
−55 to °C
+150
Lead temperature for soldering, 1/8” from
TSLD
260
°C
case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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15 A, 650 V VCEsat = 1.5 V
C
G E
C
G CE
TO−220 CASE 221A
STYLE 9
MARKING DIAGRAM
G15N60S1G AYWW
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NGTG15N60S1EG TO−220 50 Units / Rail (Pb−Free)
© Semiconductor Components Industries, LLC, 2015
1
December, 2015 − Rev. 5
Publication Order Number: NGTG15N60S1E/D
NGTG15N60S1EG
THERMAL CHARACTERISTICS Rating
Thermal resistance junction to case, for IGBT Thermal resistance junction to ambient
Symbol RqJC RqJA
Value 1.06 60
Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
V(BR)CES 650
−
−
V
Collector−emitter saturation voltage
Gate−emitter threshold voltage Collector−emitter cut−off current, gate−emitter short−circuited Gate leakage current, collector−emitter short−circuited
VGE = 15 V , IC = 15 A VGE = 15 V , IC = 15 A, TJ = 150°C
VGE = VCE , IC = 250 mA VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C VGE = 20 V, VCE = 0 V
VCEsat 1.3
1.5
1.7
V
1.55 1.75 1.95
VGE(th) 4.5
5.5
6.5
V
ICES
−
10
−
mA
−
−
200
IGES
−
−
100
nA
Forward Transconductance DYNAMIC CHARACTERISTIC
VCE = 20 V, IC = 15 A
gfs
− 10.1 −
S
Input capacitance
Output capacitance Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge Gate to collector charge
VCE = 480 V, IC = 15 A, VGE = 15 V
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Cies
− 1950 −
Coes
−
70
−
pF
Cres
−
48
−
Qg
−
88
−
Qge
−
16
−
nC
Qgc
−
42
−
Turn−on delay time
td(on)
−
65
−
Rise time Turn−off delay time Fall time Turn−on switching loss
TJ = 25°C VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
tr
−
28
−
ns
td(off)
−
170
−
tf
−
140
−
Eon
− 0.550 −
Turn−off switching loss
Eoff
− 0.350 −
mJ
Total switching loss
Ets
− 0.900 −
Turn−on delay time
td(on)
−
65
−
Rise time Turn−off delay time Fall time Turn−on switching loss
TJ = 150°C VCC = 400 V, IC = 15 A
Rg = 22 W
VGE = 0 V / 15 V*
tr
−
28
−
ns
td(off)
−
180
−
tf
−
260
−
Eon
− 0.650 −
Turn−off switching loss
Eoff
− 0.600 −
mJ
Total switching loss
Ets
− 1.250 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTB15N60S1EG.
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IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
NGTG15N60S1EG
TYPICAL CHARACTERISTICS
60 TJ = 25°C
50
VGE = 17 V to 13 V
VGE = 11 V
40
30
20 VGE = 9 V
10
0
VGE = 7 V
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics
IC, COLLECTOR CURRENT (A)
60 TJ = 150°C
50
40
VGE = 17 V to 13 V VGE = 11 V
30
20
VGE = 9 V
10
VGE = 7 V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
70
60
VGE = 17 V to 13 V
TJ = −40°C
VGE = 11 V 5.