NGTB30N120LWG

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Inverter Welding Machines Microwave Ovens Industrial Switching Motor Control Inverter ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 60 30 Pulsed collector current, Tpulse limited by TJmax ICM 240 A Diode forward current @ TC = 25°C @ TC = 100°C IF A 60 30 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Power Dissipation PD @ TC = 25°C @ TC = 100°C 240 A $20 V W 560 224 Short−Circuit Withstand Time VGE = 15 V, VCE = 600 V, TJ ≤ 150°C Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tsc TJ Tstg TSLD 5 ms −55 to +150 °C −55 to +150 °C 260 °C Stresses exceeding Maximum Ratings may ...