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NGTB25N120IHLWG

ON Semiconductor
Part Number NGTB25N120IHLWG
Manufacturer ON Semiconductor
Description IGBT
Published May 26, 2013
Detailed Description NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) ...
Datasheet PDF File NGTB25N120IHLWG PDF File

NGTB25N120IHLWG
NGTB25N120IHLWG

Overview
NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications.
Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features http://onsemi.
com • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices...


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