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H5TQ2G63BFR-xxC

Hynix Semiconductor

2Gb DDR3 SDRAM

2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83BFR-xxC H5TQ2G83BFR-xxI H5TQ2G63BFR-xxC ...


Hynix Semiconductor

H5TQ2G63BFR-xxC

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2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ2G83BFR-xxC H5TQ2G83BFR-xxI H5TQ2G63BFR-xxC http://www.DataSheet4U.net/ H5TQ2G63BFR-xxI * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 1.7 / Dec. 2010 1 datasheet pdf - http://www.DataSheet4U.net/ Revision History Revision No. 0.1 0.2 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 History Initial Release Added IDD Specification Add supported CL5 Modify the package outline with x16 Low power added M8 pin ball out update Added 1866 speed Suppport Added 2133 speed Suppport Added IDD Specification(2133 speed) Modify OPERATING FREQUENCY Table Draft Date Dec. 2009 Feb. 2010 Jun. 2010 Jun. 2010 Sep. 2010 Sep. 2010 Nov. 2010 Dec. 2010 Dec. 2010 Dec. 2010 Remark http://www.DataSheet4U.net/ Rev. 1.7 / Dec. 2010 2 datasheet pdf - http://www.DataSheet4U.net/ Description The H5TQ2G83BFR and H5TQ2G63BFR are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very...




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