Ordering number:341G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency P...
Ordering number:341G
PNP/
NPN Epitaxial Planar Silicon
Transistor
2SB632, 632K/2SD612, 612K
25V/35V, 2A Low-Frequency Power Amplifier Applications
Features
· High collector dissipation and wide ASO.
Package Dimensions
unit:mm 2009B
[2SB632, 632K/2SD612, 612K]
( ) : 2SB632, 632K
1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB632, D612 (–)25
http://www.DataSheet4U.net/
2SB632K, D612K (–)35 (–)35 (–)5 (–)2 (–)3 1
Unit V V V A A W W
(–)25
Tc=25˚C
Tj Tstg
10 150 –55 to +150
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ICBO IEBO IE=(–)10µA, IC=0 VCB=(–)20V, IE=0 VEB=(–)4V, IC=0 Conditions B632, D612 B632K, D612K B632, D612 B632K, D612K Ratings min (–)25 (–)35 (–)25 (–)35 (–)5 (–)1 (–)1 typ max Unit V V V V V µA µA
* : The 2SB632/2SD612 are classified by 500mA hFE as follows :
60
D
120
100
E
200
160
F
320
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremel...