MBR60030CTR

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60020CT thru MBR60040CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR60020CT (R) 20 14 20 600 MBR60030CT MBR60035CT (R) (R) 30 21 30 600 35 25 35 600 MBR60040CT (R) 40 28 40 600 Units V V V A IFSM 4000 http://www.DataSheet4U.net/ 4000 4000 4000 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 300 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR60020CT (R) 0.75 1 20 MBR60030CT (R) 0.75 1 20 MBR60035CT (R) 0.75 1 20 MBR60040CT (R) 0.75 1 mA 20 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR60020CT (R) 0.12 - 40 to +165 MBR60030CT (R) 0.12 - 40 to +165 MBR60035CT (R) 0.12 - 40 to +165 MBR60040CT (R) 0.12 - 40 to +165 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina ...