2N6790

2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This device can be operated directly from an integrated circuit. Features 3.5A, 200V rDS(ON) = 0.800Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Ordering Information PART NUMBER 2N6790 PACKAGE TO-205AF BRAND 2N6790 Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE ©2001 Fairchild Semiconductor Corporation 2N6790 Rev. B 2N6790 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified 2N6790 200 200 3.5 2.25 14 ±20 3.5 14 20 0.16 -55 to 150 300 260 UNITS V V A A A V A A W W/oC oC oC oC Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...