MBR500100CTR

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR50045CT thru MBR500100CTR Silicon Schottky Diode, 500A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR50045CT (R) 45 32 45 500 MBR50060CT MBR50080CT (R) (R) 60 42 60 500 80 56 80 500 MBR500100C T(R) 100 70 100 500 Units V V V A IFSM 3500 http://www.DataSheet4U.net/ 3500 3500 3500 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 250 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR50045CT (R) 0.75 1 20 MBR50060CT (R) 0.85 1 20 MBR50080CT (R) 0.88 1 20 MBR500100C T(R) 0.88 1 mA 20 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR50045CT (R) 0.12 - 40 to +165 MBR50060CT (R) 0.12 - 40 to +165 MBR50080CT (R) 0.12 - 40 to +165 MBR500100C T(R) 0.12 - 40 to +165 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ ...