MBR30040CT

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30020CT thru MBR30040CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR30020CT (R) 20 14 20 300 MBR30030CT MBR30035CT (R) (R) 30 21 30 300 35 25 35 300 MBR30040CT (R) 40 28 40 300 Units V V V A IFSM 2500 http://www.DataSheet4U.net/ 2500 2500 2500 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 150 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR30020CT (R) 0.68 8 200 MBR30030CT (R) 0.68 8 200 MBR30035CT (R) 0.68 8 200 MBR30040CT (R) 0.68 8 mA 200 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR30020CT (R) 0.4 - 40 to +175 MBR30030CT (R) 0.4 - 40 to +175 MBR30035CT (R) 0.4 - 40 to +175 MBR30040CT (R) 0.4 - 40 to +175 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina ...