MBR120100CTR

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12045CT thru MBR120100CTR Silicon Schottky Diode, 120A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR12045CT (R) 45 32 45 120 MBR12060CT MBR12080CT (R) (R) 60 42 60 120 80 56 80 120 MBR120100C T(R) 100 70 100 120 Units V V V A IFSM 800 http://www.DataSheet4U.net/ 800 800 800 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 60 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR12045CT (R) 0.68 3 200 MBR12060CT (R) 0.75 3 200 MBR12080CT (R) 0.86 3 200 MBR120100C T(R) 0.86 3 mA 200 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR12045CT (R) 0.8 - 40 to +175 MBR12060CT (R) 0.8 - 40 to +175 MBR12080CT (R) 0.8 - 40 to +175 MBR120100C T(R) 0.8 - 40 to +175 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina...