MBR8080R

Naina Semiconductor Ltd. Schottky Power Diode, 80A Features Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR8045 thru MBR80100R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 120 C TC = 25oC IF = 80 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o VRRM VRMS VDC IF IFSM VF 45 32 45 80 1000 http://www.DataSheet4U.net/ 60 42 60 80 1000 0.75 5 250 80 57 80 80 1000 0.84 5 250 100 70 100 80 1000 0.84 5 V V V A A V 0.65 5 Reverse current IR 250 250 mA Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit o Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Rth(JC) TJ Tstg F W 1.0 -65 to 150 -65 to 175 4.0 17.0 C/W o o C C Nm g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina Semiconductor Ltd. Package Outline MBR8045 thru MBR80100R http://www.DataSheet4U.net/ ALL DIMENSI...