Naina Semiconductor Ltd.
Schottky Power Diode, 60A
Features
• • • • • Fast Switching Low forward voltage drop High surge...
Naina Semiconductor Ltd.
Schottky Power Diode, 60A
Features
Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
MBR6045 thru MBR60100R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter Test Conditions Symbol MBR6045(R) MBR6060(R) MBR6080(R) MBR60100(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 100 C TC = 25oC IF = 60 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC
o
VRRM VRMS VDC IF IFSM VF
45 32 45 60 700
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60 42 60 60 700 0.75 5 150
80 57 80 60 700 0.84 5 150
100 70 100 60 700 0.84 5
V V V A A V
0.65 5
Reverse current
IR 150 150
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters Symbol MBR6045(R) MBR6060(R) MBR6080(R) MBR60100(R) Unit
o
Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight
Rth(JC) TJ Tstg F W
1.0 -65 to 150 -65 to 175 4.0 17.0
C/W
o o
C C
Nm
g
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina Semiconductor Ltd.
Package Outline
MBR6045 thru MBR60100R
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ALL DIMENSIONS ...