Naina Semiconductor Ltd.
Schottky Power Diode, 35A
Features
• • • • • Fast Switching Low forward voltage drop High surge...
Naina Semiconductor Ltd.
Schottky Power Diode, 35A
Features
Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
MBR3545 thru MBR35100R
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter Test Conditions Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 110 C TC = 25oC IF = 35 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC
o
VRRM VRMS VDC IF IFSM VF
45 32 45 35 600
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60 42 60 35 600 0.75 1.5 25
80 57 80 35 600 0.84 1.5 25
100 70 100 35 600 0.84 1.5
V V V A A V
0.68 1.5
Reverse current
IR 25 25
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
o
Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight
Rth(JC) TJ Tstg F W
1.5 -55 to 150 -55 to 175 2.0 5.0
C/ W o C o C g
Nm
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina Semiconductor Ltd.
Package Outline
MBR3545 thru MBR35100R
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