Naina Semiconductor Ltd.
Schottky Power Diode, 25A
Features
• • • • • Fast Switching Low forward voltage drop High surge...
Naina Semiconductor Ltd.
Schottky Power Diode, 25A
Features
Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
1N5829 thru 1N5831R
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC tp = 8.3 ms IF = 25 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC
o
Test Conditions
Symbol VRRM VRMS VDC IF IFSM
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1N5829(R) 20 14 20 25 800 0.58 2 250
1N5830(R) 25 17 25 25 800 0.58 2 250
1N5831(R) 35 25 35 25 800 0.58 2 250
Units V V V A A V mA
VF IR
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg F W 1N5829(R) 1N5830(R) 1.8 -55 to 150 -55 to 175 2.0 5.0 1N5831(R) Units o C/W o C o C
Nm
g
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina Semiconductor Ltd.
Package Outline
1N5829 thru 1N5831R
http://www.DataSheet4U.net/
ALL DIMENSIONS IN MM
2
D-95, Sector 63, Noida – 201301, India Tel: 0120-...