1N5830

Naina Semiconductor Ltd. Schottky Power Diode, 25A Features Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5829 thru 1N5831R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC tp = 8.3 ms IF = 25 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o Test Conditions Symbol VRRM VRMS VDC IF IFSM http://www.DataSheet4U.net/ 1N5829(R) 20 14 20 25 800 0.58 2 250 1N5830(R) 25 17 25 25 800 0.58 2 250 1N5831(R) 35 25 35 25 800 0.58 2 250 Units V V V A A V mA VF IR Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg F W 1N5829(R) 1N5830(R) 1.8 -55 to 150 -55 to 175 2.0 5.0 1N5831(R) Units o C/W o C o C Nm g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina Semiconductor Ltd. Package Outline 1N5829 thru 1N5831R http://www.DataSheet4U.net/ ALL DIMENSIONS IN MM 2 D-95, Sector 63, Noida – 201301, India Tel: 0120-...