Document
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt
2N6726 2N6727
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 2N6726 -40 -30 -5 -2 -1 1
E-Line TO92 Compatible 2N6727 -50 -40 UNIT V V V A A W °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) 55 60 50 50 -40 -30 -5 -0.1 -0.1 -0.5 -1.2 55 60 50 50 2N6726 MIN. MAX. -50 -40 -5 -0.1 -0.1 -0.5 -1.2 2N6727 MIN. MAX. V V V
µA µA µA
UNIT
CONDITIONS. IC=-1mA, IE=0 IC=-10mA, IB=0* IE=-1mA, IC=0 VCB=-40V, IE=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-1A, IB=-100mA* IC=-1A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-100mA, VCE=-1V* IC=-1A, VCE=-1V*
V V
Static Forward hFE Current Transfer Ratio Transition Frequency Collector Base Capacitance fT CCB
250 500 30 3-8
250 500 30 MHz pF
IC=-50mA, VCE=-10V VCE=-10V, f=1MHz
.