2N6725

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt 2N6724 2N6725 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 50 40 10 2 1 1 E-Line TO92 Compatible 2N6724 2N6725 60 50 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE CCB 25K 15K 4K 2N6724 2N6725 UNIT CONDITIONS. MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Collector Base Capacitance 50 40 10 1.0 0.1 1.0 1.5 2.0 2.0 25K 15K 4K MAX. MIN. 60 50 10 1.0 0.1 1.0 1.5 2.0 2.0 MAX. V V V µA µA µA IC=1µ A, IE=0 IC=1mA, IB=0* IE=10µ A, IC=0 VCB=30V, IE=0 VCB=40V, IE=0 VEB=8V, IC=0 IC=200mA, IB=2mA* IC=1A, IB=2mA* IC=1A, IB=2mA* IC=1A, VCE=5V* IC=200mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* V V V V 40K 10 40K 10 pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-7 ...