2N6715

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt 2N6714 2N6715 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 40 30 5 2 1 1 E-Line TO92 Compatible 2N6714 2N6715 50 40 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector Base Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE fT CCB 55 60 50 50 40 30 5 0.1 0.1 0.5 1.2 55 60 50 50 2N6714 MIN. 50 40 5 0.1 0.1 0.5 1.2 2N6715 MAX. V V V µA µA µA UNIT CONDITIONS. IC=1mA, IE=0 IC=10mA, IB=0* IE=1mA, IC=0 VCB=40V, IE=0 VCB=50V, IE=0 VEB=5V, IC=0 IC=1A, IB=100mA* IC=1A, VCE=1V* IC=10mA, VCE=1V* IC=100mA, VCE=1V* IC=1A, VCE=1V* MAX. MIN. V V 250 500 30 250 500 30 MHz pF IC=50mA, VCE=10V VCE=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-5 ...