AS6C2008

February 2007 ® AS6C2008 Rev. 1.1 256K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The AS6C2008 is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C2008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2008 operates from a single power supply of 2.7V ~ 3.6V . FEATURES Access time : 55ns Low power consumption: Operating current :20mA (TYP.) Standby current : 1µ A (TYP.) LL-version Single 2.7V ~ 3.6V power supply Fully static operation Tri-state output Data retention voltage : 1.5V (MIN.) All Products ROHS Compliant Package : 32-pin 450 mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm sTSOP 36-ball 6mm x 8mm TFBGA PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C2008 (I) -40 ~ 85ºC 2.7 ~ 3.6V 55ns http://www.DataSheet4U.net/ 20µA(L)/1µA(LL) 20mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Inputs Write Enable Input Output Enable Input Power Supply Ground No Connection Vcc Vss A0 - A17 DQ0 – DQ7 DECODER 256Kx8 MEMORY ARRAY CE#, CE2 WE# OE# VCC VSS NC A0-A17 DQ0-DQ7 I/O DATA CIRCUIT COLUMN I/O CE# CE2 WE# OE# C...