Document
3.4 - 3.6 GHz WiMAX Power Amplifier Module
• InGaP HBT Technology • 30 dB Gain • < 3 % EVM at +22 dBm (+3.3 V Supply) • 4 % EVM at +23 dBm (+3.3 V Supply) • < 3 % EVM at +23 dBm (+4.2 V Supply) • 4 % EVM at +24 dBm (+4.2 V Supply) • High Efficiency • Integrated 25 dB Attenuator • Integrated Output Power Detector • 50 Matched RF Ports for Reduced External Component Count • 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module, Materials Set Consistent with RoHS Directives
AWM6433
preliminary data sheet - rev 1.0
FEATURES
APPLICATIONS
M35 Package 12 Pin 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module
produces an increase in the maximum linear output power. The integrated detector can be used to monitor output power, and the integrated 25 dB step attenuator enables gain control. No external circuits are required for biasing or RF impedance matching, thus reducing external component costs and facilitating circuit board designs.
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• WiMAX Tranceivers That Support the IEEE 802.16d-2004, IEEE 802.16e-2005, and the ETSI EN301-021 Wireless standards
PRODUCT DESCRIPTION
The ANADIGICS AWM6433 WiMAX Power Amplifier is a high performance device that delivers exceptional linearity and efficiency at high levels of output power. Designed for portable or mobile applications in the 3.4-3.6 GHz band, it supports the IEEE 802.16e-2005 wireless standard, as well as the IEEE 802.16d-2004 and ETSI EN301-021 standards. The device requires only a nominal +3.3 V supply and a low-current bias input. An increase in supply voltage
Supply Voltage
The AWM6433 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability, and ruggedness. It is offered in a 4.5 mm x 4.5 mm x 1.0 mm surface mount module optimized for use in a 50 system.
Supply Voltage
RF Input
Step Attenuator
Matching Network
RF Output
Bias Control
Power Detector
Attenuator Control
Bias Voltage
Detector Ouput
Ground
Figure 1: Functional Block Diagram
12/2008
datasheet pdf - http://www.DataSheet4U.net/
AWM6433
VCC rFin Gnd VBiAs VCC VAttn
1 2 3 4 5 6
Figure 2: Pinout (X-ray Top View)
12 VCC 11 Gnd 10 rFOUt 9 8 7 Gnd Gnd det
Gnd
Table 1: Pin Description
pin 1 2 3 4 5 6 7 8 9 10 11 12 nAMe VCC RFIN GND VBIAS VCC VATTN DET GND GND RFOUT GND VCC desCriptiOn Supply Voltage
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RF Input Ground Bias/Shutdown Supply Voltage Attenuator Control Detector Output Ground Ground RF Output Ground Supply Voltage
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PRELIMINARY DATA SHEET - Rev 1.0 12/2008
datasheet pdf - http://www.DataSheet4U.net/
AWM6433
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
pArAMeter Supply Voltage (VCC) Bias Voltage (VBIAS) Attenuator Control Voltage (VATTN) RF Input Power ESD Rating Human Body Model Charged Device Model MSL Level Storage Temperature Min 0 0 0 TBD TBD TBD -40 MAX +5.0 +3.0 +3.7 0 +150 Unit V V V dBm V °C OFDM modulated signal COMMents
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
pArAMeter Operating Frequency (f) Supply Voltage (VCC) Bias Voltage (VBIAS) Attenuator Control Voltage (VATTN) Logic High Logic Low RF Output Power (POUT) Case Temperature (TC) Min 3400 +2.9 +2.80 0 +2.3 0 -40 typ +3.3 +2.85 +23 MAX
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Unit MHz V V
COMMents
3600 +4.2 +2.90 +0.7 +3.7 +0.7 +85
PA"on" PA"shut down" Attenuator enabled Nominal gain
V dBm °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
PRELIMINARY DATA SHEET - Rev 1.0 12/2008
3
datasheet pdf - http://www.DataSheet4U.net/
AWM6433 Table 4: Electrical Specifications (TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, f = 3.6 GHz, 50 Ω system)
pArAMeter Gain Attenuator Step Output Power Meets Spectrum Mask EVM Output P1dB Output IP3 Harmonics Power-Added Efficiency Power Detector Voltage at +24 dBm POUT at +14 dBm POUT Quiescent Current Current Consumption VCC VCC VBIAS VATTN Leakage Current (2) Min typ 31 25 +24 2.8 4 +29 +40 -30 23 +2.15 +0.85 135
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MAX 3.2 8.0 1.0
Unit dB dB dBm % dBm dBm dBc %
COMMents
ETSI EN301-021 Type G at +22 dBm POUT at +23 dBm POUT CW two CW tones, +19 dBm output per tone at +24 dBm POUT at +24 dBm POUT
V mA
High impedance load
280 325 6.5 0.2
mA
at +22 dBm POUT at +24 dBm POUT Logic High = +3.3 V PA shut down (VBIAS = 0V) See figure 7 Application Circuit.
-
1.7
3.0
mA
Notes: 1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted. (2) Lower leakage current may be obtained by using an alternate application circuit. Please refer to the ANADIGICS application note titled, “AWM6423 Reduced leakage current in Off State.”
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PRELIMINARY DATA SHEET - R.