PPJX8806
20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage Features
20 V
Current
800mA
S...
PPJX8806
20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage Features
20 V
Current
800mA
SOT-563
Unit : inch(mm)
RDS(ON),
[email protected],IDS@500mA=0.4Ω RDS(ON),
[email protected],IDS@300mA=0.7Ω RDS(ON),
[email protected],IDS@100mA=1.2Ω(typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case: SOT-563 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00009 ounces, 0.0026 grams Marking: X06
http://www.DataSheet4U.net/
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
o
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25 C Derate above 25 C
o o
SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA
LIMIT
UNITS V V mA mA mW mW/ oC
o
20 +12 800 3000 350 2.8 -55~150 357
o
Operating Junction and Storage Temperature Range Thermal resistance Junction to Ambient (Note 3)
C
C/W
April 19,2013-REV.00
Page 1
datasheet pdf - http://www.DataSheet4U.net/
PPJX8806
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Cap...
