2SD2449

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·High DC Current Gain- : hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) ·Complement to Type 2SB1594 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 150 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2449 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2449 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 8mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 5V 3.0 V ICBO Collector Cutoff Current VCB= 160V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 160V; IB= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 8A; VCE= 5V 3000 20000 hFE-2 DC Current Gain IC= 12A...