TS13007B

TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC / IB = 8A / 2A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13007BCZ C0 Package TO-220 Packing 50pcs / Tube http://www.DataSheet4U.net/ Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty ≤2% DC Pulse DC Pulse Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Limit 700V 400V 9 8 16 4 8 80 +150 - 55 to +150 Unit V V V A A W o o C C 1/5 Version: A07 datasheet pdf - http://www.DataSheet4U.net/ TS13007B High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC =1mA, IB =0 IC =10mA, IE =0 IE =1mA, IC =0 VCE =400V, IB=0 VCB =700V, IE =0 VEB = 9V, IC =0 IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCE =5V, IC = 2A VCE =5V, IC = 5A VCE =10V, IC =0.5A VCB =10V, f =0.1MHz http://www.DataShe...