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TS13007

Taiwan Semiconductor

High Voltage NPN Transistor

TS13007 High Voltage NPN Transistor Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 700V Ic = 8A ...


Taiwan Semiconductor

TS13007

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TS13007 High Voltage NPN Transistor Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 700V Ic = 8A VCE (SAT), = 3V @ Ic / Ib = 8A / 2A Features — Suitable for switching regulator and motor control Ordering Information Part No. TS13007CZ Packing Tube Package TO-220 — High speed switching Structure — Silicon triple diffused type. Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Tc=25 C o http://www.DataSheet4U.net/ Symbol VCBO VCEO VEBO DC Pulse IB PD TJ TSTG o Limit 700V 400V 9 8 16 4 80 +150 - 65 to +150 Unit V V V A A W o o IC C C Electrical Characteristics (Ta = 25 Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cutoff Current Collector-Emitter Saturation Voltage C unless otherwise noted) Conditions IC = 10mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VEB = 9V, IC = 0 IC / IB = 2A / 0.4A IC / IB = 5A / 1A IC / IB = 8A / 2A Symbol BVCBO BVCEO BVEBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE 1 hFE 2 fT Cob tON RL tSTG tf Min 700 400 9 ------8 5 4 ----- Typ ------------110 ---- Max ---1 1 2 3 1.2 1.6 60 30 --1.6 3 0.7 Unit V V V mA V Base-Emitter Saturation Voltage DC Current Gain Frequency Output Capacitance Turn On Time Storage T...




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