2N6667

www.DataSheet4U.com 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80 Vdc (Min) − 2N6668 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package Complementary to 2N6387, 2N6388 Pb−Free Packages are Available* http://onsemi.com PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W MARKING DIAGRAM 4 COLLECTOR 1 2 3 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 2N666x AYWWG BASE CASE 221A−09 TO−220AB x A Y WW G = 7 or 8 = Assembly Location = Year = Work Week = Pb−Free Package ≈8k ≈ 120 EMITTER Figure 1. Darlington Schematic ORDERING INFORMATION Device 2N6667 2N6667G Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail 2N6668 2N6668G 50 Units/Rail 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 June, 2005 − Rev. 5 Publication Order Number: 2N6667/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...