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2N6661

Seme LAB

N-CHANNEL ENHANCEMENT MODE POWER MOSFET


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N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 90...



Seme LAB

2N6661

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