600V N-Channel MOSFET
PJU1N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resi...
Description
PJU1N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives
T O- 25 1
TO -2 5 1
G
1
D S3
2
MECHANICAL DATA
Case: TO-220AB / TO-251 Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026
INTE RNA L S CHE M ATIC DIA GRA M
2
Drain
ORDERING INFORMATION
TYPE
PJU1N60
1
Gate
MARKING
U1N60
PACKAGE
TO-251
PACKING
3
80PCS/TUBE
S ource
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
http://www.DataSheet4U.net/
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA
P J U1 N6 0 600 +3 0 1 4 .6 28 0 .2 2 -5 5 to +1 5 0 58 4 .5 100
Uni ts V V A A W
O
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
C
Avalanche Energy with Single Pulse
IAS=1.1A, VDD=50V, L=95mH
mJ
O
Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance
C /W C /W
O
Note : 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
April 12,2010-REV.00 PAGE . 1
datas...
Similar Datasheet